JPH0133548B2 - - Google Patents
Info
- Publication number
- JPH0133548B2 JPH0133548B2 JP60212976A JP21297685A JPH0133548B2 JP H0133548 B2 JPH0133548 B2 JP H0133548B2 JP 60212976 A JP60212976 A JP 60212976A JP 21297685 A JP21297685 A JP 21297685A JP H0133548 B2 JPH0133548 B2 JP H0133548B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic field
- substrate
- plate
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 57
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 230000004907 flux Effects 0.000 claims description 16
- 239000000696 magnetic material Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 9
- 230000005415 magnetization Effects 0.000 description 8
- 230000005381 magnetic domain Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60212976A JPS6274073A (ja) | 1985-09-26 | 1985-09-26 | スパツタ装置 |
US06/911,421 US4673482A (en) | 1985-09-26 | 1986-09-25 | Sputtering apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60212976A JPS6274073A (ja) | 1985-09-26 | 1985-09-26 | スパツタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6274073A JPS6274073A (ja) | 1987-04-04 |
JPH0133548B2 true JPH0133548B2 (en]) | 1989-07-13 |
Family
ID=16631411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60212976A Granted JPS6274073A (ja) | 1985-09-26 | 1985-09-26 | スパツタ装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4673482A (en]) |
JP (1) | JPS6274073A (en]) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4842707A (en) * | 1986-06-23 | 1989-06-27 | Oki Electric Industry Co., Ltd. | Dry process apparatus |
US5215619A (en) * | 1986-12-19 | 1993-06-01 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
JPH0649937B2 (ja) * | 1987-12-17 | 1994-06-29 | 株式会社日立製作所 | 磁性膜形成装置 |
JPH0689446B2 (ja) * | 1988-12-19 | 1994-11-09 | 株式会社日立製作所 | 薄膜形成装置 |
ES2073508T3 (es) * | 1989-04-10 | 1995-08-16 | Imec Inter Uni Micro Electr | Metodo para aplicar una capa de material superconductor y un dispositivo adecuado para dicho metodo. |
US5026470A (en) * | 1989-12-19 | 1991-06-25 | International Business Machines | Sputtering apparatus |
US5630916A (en) * | 1993-03-02 | 1997-05-20 | Cvc Products, Inc. | Magnetic orienting device for thin film deposition and method of use |
US6221217B1 (en) | 1995-07-10 | 2001-04-24 | Cvc, Inc. | Physical vapor deposition system having reduced thickness backing plate |
GB2318590B (en) * | 1995-07-10 | 1999-04-14 | Cvc Products Inc | Magnetron cathode apparatus and method for sputtering |
US6039848A (en) * | 1995-07-10 | 2000-03-21 | Cvc Products, Inc. | Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. |
GB2319262B (en) * | 1995-07-10 | 1999-02-24 | Cvc Products Inc | Permanent magnet array apparatus and method |
US6249200B1 (en) * | 1998-04-10 | 2001-06-19 | Dexter Magnetic Technologies, Inc. | Combination of magnets for generating a uniform external magnetic field |
US6042707A (en) * | 1998-05-22 | 2000-03-28 | Cvc Products, Inc. | Multiple-coil electromagnet for magnetically orienting thin films |
US6106682A (en) * | 1998-05-22 | 2000-08-22 | Cvc Products, Inc. | Thin-film processing electromagnet for low-skew magnetic orientation |
US6545580B2 (en) | 1998-09-09 | 2003-04-08 | Veeco Instruments, Inc. | Electromagnetic field generator and method of operation |
US6579421B1 (en) | 1999-01-07 | 2003-06-17 | Applied Materials, Inc. | Transverse magnetic field for ionized sputter deposition |
US10047430B2 (en) | 1999-10-08 | 2018-08-14 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US8696875B2 (en) * | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US6373364B1 (en) | 2000-02-03 | 2002-04-16 | Cvc Products, Inc. | Electromagnet for thin-film processing with winding pattern for reducing skew |
US7504006B2 (en) * | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
JP5119021B2 (ja) * | 2008-03-26 | 2013-01-16 | 新明和工業株式会社 | シートプラズマ成膜装置、及びシートプラズマ調整方法 |
CN110643958A (zh) * | 2019-10-21 | 2020-01-03 | 吴浪生 | 一种利用溅镀实现晶圆的物理镀膜设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4461688A (en) * | 1980-06-23 | 1984-07-24 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method |
US4434038A (en) * | 1980-09-15 | 1984-02-28 | Vac-Tec Systems, Inc. | Sputtering method and apparatus utilizing improved ion source |
US4361472A (en) * | 1980-09-15 | 1982-11-30 | Vac-Tec Systems, Inc. | Sputtering method and apparatus utilizing improved ion source |
CH648690A5 (de) * | 1980-10-14 | 1985-03-29 | Balzers Hochvakuum | Kathodenanordnung zur abstaeubung von material von einem target in einer kathodenzerstaeubungsanlage. |
CH649578A5 (de) * | 1981-03-27 | 1985-05-31 | Ulvac Corp | Hochgeschwindigkeits-kathoden-zerstaeubungsvorrichtung. |
US4422896A (en) * | 1982-01-26 | 1983-12-27 | Materials Research Corporation | Magnetically enhanced plasma process and apparatus |
ATE47253T1 (de) * | 1983-12-05 | 1989-10-15 | Leybold Ag | Magnetronkatode zum zerstaeuben ferromagnetischer targets. |
US4606802A (en) * | 1983-12-21 | 1986-08-19 | Hitachi, Ltd. | Planar magnetron sputtering with modified field configuration |
-
1985
- 1985-09-26 JP JP60212976A patent/JPS6274073A/ja active Granted
-
1986
- 1986-09-25 US US06/911,421 patent/US4673482A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4673482A (en) | 1987-06-16 |
JPS6274073A (ja) | 1987-04-04 |
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